TRANSIENT PHOTOCONDUCTIVITY IN SI-DOPED AL0.26GA0.74AS

被引：6

作者：

GHOSH, S

KUMAR, V

机构：

[1] Department of Physics Indian Institute of Science Bangalore

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 83卷 / 01期

关键词：

D O I：

10.1016/0038-1098(92)90009-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Transient growth of photoconductivity at temperatures below 30K in Si-doped molecular beam epitaxial Al0.26Ga0.74 As has been studied. We have observed a two step phtoionization which can be analyzed and simulated by ionization kinetics represented by a set of coupled differential equations with negative-U initial conditions. Quantitative analysis of ionization kinetics at different temperatures and light intensities gives us the desired proof of negatively charged ground state of DX center and existence of a thermodynamically metastable neutral (DX(o)) state.

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页码：37 / 39

页数：3

相关论文

共 10 条

[1] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[3] DIRECT EVIDENCE FOR 2-STEP PHOTOIONIZATION OF DX(TE) CENTERS IN ALXGA1-XAS [J].

DOBACZEWSKI, L ;

KACZOR, P .

PHYSICAL REVIEW LETTERS, 1991, 66 (01) :68-71

[4]

GHOSH SN, IN PRESS

[5]

HARIS RD, 1982, PHYS REV LETT, V48, P1271

[6] INVESTIGATION OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

KUNZEL, H ;

FISCHER, A ;

KNECHT, J ;

PLOOG, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 32 (02) :69-78

[7] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

LANG, DV ;

LOGAN, RA ;

JAROS, M .

PHYSICAL REVIEW B, 1979, 19 (02) :1015-1030

[8] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :351-353

[9]

TACHIKAWA M, 1985, JPPN J APPL PHYS, V24, pL281

[10] ELECTRON LOCALIZATION BY A METASTABLE DONOR LEVEL IN N-GAAS - A NEW MECHANISM LIMITING THE FREE-CARRIER DENSITY [J].

THEIS, TN ;

MOONEY, PM ;

WRIGHT, SL .

PHYSICAL REVIEW LETTERS, 1988, 60 (04) :361-364