LOW-TEMPERATURE GROWTH AND PLANAR DOPING OF ZNSE IN A PLASMA-STIMULATED LP-MOVPE SYSTEM

被引：6

作者：

TAUDT, W

WACHTENDORF, B

SAUERLANDER, F

HAMADEH, H

LAMPE, S

HEUKEN, M

机构：

[1] Institut für Halbleitertechnik, RWTH Aachen, Aachen, D-52056

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 11期

关键词：

METALORGANIC VAPOR PHASE EPITAXY (MOVPE); PLASMA ACTIVATED NITROGEN; PLANAR DOPING; ZNSE; N;

D O I：

10.1007/BF02676830

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In a low-pressure metalorganic vapor phase epitaxy process, we used dc-plasma activated nitrogen to dope ZnSe, grown with ditertiarybutylselenide and dimethylzinc-triethylamine. The nitrogen concentration of up to 2 x 10(18) cm(-3) in the doped layers can be adjusted by the growth temperature, the de-plasma power, and the N-2 dopant flow. Due to the high n-type background carrier concentration of the order of 10(17) cm(-3) in undoped samples, the doped layers show n-type conductivity or were semi-insulating because of an additional compensation by hydrogen incorporated with a concentration of the order of 10(18) cm(-3). A planar doping scheme was applied to reduce this hydrogen incorporation by one order of magnitude, although H-2 was used as carrier gas.

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页码：1671 / 1675

页数：5

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