PLANAR-DOPING OF MOLECULAR-BEAM EPITAXY GROWN ZNSE WITH PLASMA-EXCITED NITROGEN

被引：15

作者：

MATSUMOTO, S ^{[1
]}

TOSAKA, H ^{[1
]}

YOSHIDA, T ^{[1
]}

KOBAYASHI, M ^{[1
]}

YOSHIKAWA, A ^{[1
]}

机构：

[1] NEW JAPAN RADIO CO LTD,DIV SEMICOND,CTR ADV TECHNOL,KAMIFUKUOKA 356,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 2B期

关键词：

PLANAR DOPING; NITROGEN PLASMA; ZNSE; MBE;

D O I：

10.1143/JJAP.32.L229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar doping of nitrogen into ZnSe is examined. The dependence of doping efficiency on the particular surface termination (Zn- or Se-stabilised) on (100) ZnSe is investigated through capacitance-voltage measurement and low-temperature photoluminescence (PL) spectroscopy. Using planar doping on the Zn surface, we achieved a hole concentration of 4.5 X 10(17) cm-3, and the PL spectrum is dominated by strong donor-acceptor pair (DAP) emissions. By contrast, the film planar-doped on the Se plane shows rather low hole concentration, and the spectrum is dominated by excitonic features along with very weak DAP emissions.

引用

页码：L229 / L232

页数：4

共 16 条

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