NITROGEN DOPING OF ZNSE BY OMVPE USING A NOVEL ORGANOMETALLIC PRECURSOR

We have investigated phenylhydrazine (PhHz) as a potential nitrogen dopant source in organometallic vapor phase epitaxial growth of ZnSe. Dimethylzinc and dimethylselenide were the zinc and selenium precursors, respectively. Photoluminescence and secondary ion mass spectroscopy measurements indicate that high incorporation efficiency compared to ammonia can be achieved using this dopant source. For example, nitrogen incorporation in the 2.5 x 10(18)/cm-3 level was achieved at 350-degrees-C under ultraviolet excitation when the PhHz partial pressure was 1 x 10(-8) atm. These layers had 1-2 x 10(15)/cm-3 electrically active acceptors. Films grown at higher partial pressures of PhHz were highly compensated.