Fabrication of silicon nanostructures with a poly(methylmethacrylate) single-layer process

被引：12

作者：

Tada, T ^{[1
]}

Kanayama, T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期

关键词：

D O I：

10.1116/1.588269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Poly(methylmethacrylate) has been found to act as a high resolution negative electron beam resist with sufficient dry-etch durability if acetone is used as a developer. We fabricated 10 nm silicon structures using the poly(methylmethacrylate) single-layer process and low temperature electron cyclotron resonance-type microwave-plasma etching without any additional complex processes. (C) 1995 American Vacuum Society.

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页码：2801 / 2804

页数：4

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