DIFFUSION OF OXYGEN IN SILICON

被引：46

作者：

WATKINS, GD

CORBETT, JW

MCDONALD, RS

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

[2] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,ALBANY,NY 12222

[3] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[4] GE,CORP RES & DEV,SCHENECTADY,NY 12301

来源：

关键词：

D O I：

10.1063/1.330017

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7097 / 7098

页数：2

共 5 条

CORBETT, JW ;

MCDONALD, RS ;

WATKINS, GD .

[2] DIFFUSIVITY OF OXYGEN IN SILICON DURING STEAM OXIDATION [J].

MIKKELSEN, JC .

SOUTHGATE, PD .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (489) :385-397

SOUTHGATE, PD .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1960, 76 (489) :398-408

[5]

TAKANO Y, 1973, SEMICONDUCTOR SILICO, P469