DEEP STATES IN A-SI-H - CHANGES WITH LIGHT SOAKING AND APPLIED STRESS

被引：4

作者：

KOCKA, J

VANECEK, M

NESLADEK, M

TRING, QD

STUCHLIK, J

STIKA, O

TRISKA, A

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 97-8卷

关键词：

D O I：

10.1016/0022-3093(87)90196-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：819 / 822

页数：4

共 11 条

[1] INFLUENCE OF STRESS ON LIGHT-INDUCED EFFECTS IN AMORPHOUS-SILICON ALLOYS [J].

GUHA, S ;

DENBOER, W ;

AGARWAL, SC ;

HACK, M .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :947-949

[2] STUDY OF LIGHT-INDUCED CREATION OF DEFECTS IN A-SI-H BY MEANS OF SINGLE AND DUAL-BEAM PHOTOCONDUCTIVITY [J].

HAN, D ;

FRITZSCHE, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :397-400

[3] A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC [J].

KOCKA, J ;

VANECEK, M ;

SCHAUER, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :715-722

[4]

KOCKA J, 1987, IN PRESS 1987 P MRS

[5] CORRELATION OF STRESS WITH LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

KURTZ, SR ;

TSUO, YS ;

TSU, R .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :951-953

[6]

LEE C, 1984, AIP CONF PR, V120, P205

[7] STUDY OF LIGHT-INDUCED METASTABLE DEFECTS BY MEANS OF TEMPERATURE-MODULATED SPACE-CHARGE-LIMITED CURRENTS [J].

SCHAUER, F ;

KOCKA, J .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (01) :L25-L30

[8]

SMITH ZE, 1987, IN PRESS JAN P INT C

[9] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J].

SPEAR, WE ;

STEEMERS, HL ;

LECOMBER, PG ;

GIBSON, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :L33-L40

[10] ROLE OF MECHANICAL-STRESS IN THE LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON [J].

STUTZMANN, M .

APPLIED PHYSICS LETTERS, 1985, 47 (01) :21-23

← 1 2 →