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LPE GROWTH AND SURFACE-MORPHOLOGY OF INXGA1-XASYP1-Y (Y-LESS-THAN-OR-EQUAL-TO-0.01) ON (100)GAAS
被引:15
作者
:
HIRAMATSU, K
论文数:
0
引用数:
0
h-index:
0
HIRAMATSU, K
TOMITA, K
论文数:
0
引用数:
0
h-index:
0
TOMITA, K
SAWAKI, N
论文数:
0
引用数:
0
h-index:
0
SAWAKI, N
AKASAKI, I
论文数:
0
引用数:
0
h-index:
0
AKASAKI, I
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1984年
/ 23卷
/ 01期
关键词
:
D O I
:
10.1143/JJAP.23.68
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:68 / 73
页数:6
相关论文
共 17 条
[1]
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
[2]
PHASE-EQUILIBRIA IN III-V QUATERNARY SYSTEMS - APPLICATION TO AL-GA-P-AS
[J].
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
;
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PANISH, MB
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1974,
35
(03)
:409
-420
[3]
PREVENTION OF CIRCUMFERENTIAL MELTBACK IN LPE GROWTH OF INP INGAASP INGAAS INP LAYERS FOR AVALANCHE PHOTO-DIODES
[J].
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
;
AMANO, T
论文数:
0
引用数:
0
h-index:
0
AMANO, T
;
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
:8
-14
[4]
GROWTH-KINETICS OF LPE GA0.83AL0.17SB LAYERS GROWN FROM SUPERCOOLED SOLUTIONS
[J].
MEBARKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
MEBARKI, M
;
SALSAC, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
SALSAC, P
;
JOULLIE, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
JOULLIE, A
;
BOUGNOT, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
BOUGNOT, G
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
:637
-640
[5]
LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
;
SHIMADA, JI
论文数:
0
引用数:
0
h-index:
0
SHIMADA, JI
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
:L505
-L508
[6]
SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
YAJIMA, H
论文数:
0
引用数:
0
h-index:
0
YAJIMA, H
;
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(05)
:1001
-1002
[7]
LPE GROWTH OF IN1-XGAXP1-ZASZ (Z LESS THAN OR EQUAL TO 0.01) ON (1 0 0) GAAS SUBSTRATES AND ITS LATTICE-CONSTANTS AND PHOTO-LUMINESCENCE
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
;
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(02)
:321
-327
[8]
STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY
[J].
MULLINS, WW
论文数:
0
引用数:
0
h-index:
0
MULLINS, WW
;
SEKERKA, RF
论文数:
0
引用数:
0
h-index:
0
SEKERKA, RF
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:444
-&
[9]
INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
[J].
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
.
APPLIED PHYSICS LETTERS,
1978,
32
(04)
:234
-236
[10]
DIRECT LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY INP ON (111)A ORIENTED IN0.53GA0.47AS
[J].
NAKAJIMA, K
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, K
;
YAMAZAKI, S
论文数:
0
引用数:
0
h-index:
0
YAMAZAKI, S
;
AKITA, K
论文数:
0
引用数:
0
h-index:
0
AKITA, K
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
:535
-545
←
1
2
→
共 17 条
[1]
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
[2]
PHASE-EQUILIBRIA IN III-V QUATERNARY SYSTEMS - APPLICATION TO AL-GA-P-AS
[J].
ILEGEMS, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ILEGEMS, M
;
PANISH, MB
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
PANISH, MB
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1974,
35
(03)
:409
-420
[3]
PREVENTION OF CIRCUMFERENTIAL MELTBACK IN LPE GROWTH OF INP INGAASP INGAAS INP LAYERS FOR AVALANCHE PHOTO-DIODES
[J].
KONDO, S
论文数:
0
引用数:
0
h-index:
0
KONDO, S
;
AMANO, T
论文数:
0
引用数:
0
h-index:
0
AMANO, T
;
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(01)
:8
-14
[4]
GROWTH-KINETICS OF LPE GA0.83AL0.17SB LAYERS GROWN FROM SUPERCOOLED SOLUTIONS
[J].
MEBARKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
MEBARKI, M
;
SALSAC, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
SALSAC, P
;
JOULLIE, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
JOULLIE, A
;
BOUGNOT, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLID,CNRS LAB 21,F-34060 MONTPELLIER,FRANCE
BOUGNOT, G
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
:637
-640
[5]
LPE GROWTH AND LUMINESCENCE OF IN1-XGAXPYAS1-Y ON (1, 0, 0) GAAS WITH BAND-GAP ENERGY IN THE REGION OF 1.569 EV LESS-THAN-OR EQUAL-TO EG LESS-THAN-OR EQUAL-TO 1.893 EV
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
;
SHIMADA, JI
论文数:
0
引用数:
0
h-index:
0
SHIMADA, JI
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1980,
19
(09)
:L505
-L508
[6]
SURFACE DECOMPOSITION OF GAAS SUBSTRATES IN LPE GROWTH OF INGAASP AND ITS EFFECT ON CRYSTAL QUALITY
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
YAJIMA, H
论文数:
0
引用数:
0
h-index:
0
YAJIMA, H
;
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(05)
:1001
-1002
[7]
LPE GROWTH OF IN1-XGAXP1-ZASZ (Z LESS THAN OR EQUAL TO 0.01) ON (1 0 0) GAAS SUBSTRATES AND ITS LATTICE-CONSTANTS AND PHOTO-LUMINESCENCE
[J].
MUKAI, S
论文数:
0
引用数:
0
h-index:
0
MUKAI, S
;
MATSUZAKI, M
论文数:
0
引用数:
0
h-index:
0
MATSUZAKI, M
;
SHIMADA, J
论文数:
0
引用数:
0
h-index:
0
SHIMADA, J
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1981,
20
(02)
:321
-327
[8]
STABILITY OF PLANAR INTERFACE DURING SOLIDIFICATION OF DILUTE BINARY ALLOY
[J].
MULLINS, WW
论文数:
0
引用数:
0
h-index:
0
MULLINS, WW
;
SEKERKA, RF
论文数:
0
引用数:
0
h-index:
0
SEKERKA, RF
.
JOURNAL OF APPLIED PHYSICS,
1964,
35
(02)
:444
-&
[9]
INP-GAXIN1-XASYP1-Y DOUBLE HETEROSTRUCTURE FOR 1.5 MUM WAVELENGTH
[J].
NAGAI, H
论文数:
0
引用数:
0
h-index:
0
NAGAI, H
;
NOGUCHI, Y
论文数:
0
引用数:
0
h-index:
0
NOGUCHI, Y
.
APPLIED PHYSICS LETTERS,
1978,
32
(04)
:234
-236
[10]
DIRECT LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY INP ON (111)A ORIENTED IN0.53GA0.47AS
[J].
NAKAJIMA, K
论文数:
0
引用数:
0
h-index:
0
NAKAJIMA, K
;
YAMAZAKI, S
论文数:
0
引用数:
0
h-index:
0
YAMAZAKI, S
;
AKITA, K
论文数:
0
引用数:
0
h-index:
0
AKITA, K
.
JOURNAL OF CRYSTAL GROWTH,
1983,
61
(03)
:535
-545
←
1
2
→