EVIDENCE OF DEEP LEVELS IN CRYSTALLINE CUINSE2

被引：3

作者：

QIU, CX

SHIH, I

机构：

来源：

SOLAR CELLS | 1986年 / 16卷 / 1-4期

关键词：

D O I：

10.1016/0379-6787(86)90099-2

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

收藏

页码：391 / 397

页数：7

相关论文

共 10 条

[1] Abou-Elfotouh F., 1985, Sixth E.C. Photovoltaic Solar Energy Conference, P841
[2] ELECTRICAL-PROPERTIES OF P-TYPE AND N-TYPE CUINSE2 SINGLE-CRYSTALS
IRIE, T
ENDO, S
KIMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (07) : 1303 - 1310
[3] RADIATIVE RECOMBINATION AND SHALLOW CENTERS IN CULNSE2
MASSE, G
REDJAI, E
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1154 - 1159
[4] ELECTRICAL-PROPERTIES OF P-TYPE CUINSE2 SINGLE-CRYSTALS
NEUMANN, H
TOMLINSON, RD
NOWAK, E
AVGERINOS, N
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (02): : K137 - K140
[5] THERMALLY STIMULATED CAPACITANCE (TSCAP) IN P-N-JUNCTIONS
SAH, CT
WALKER, JW
CHAN, WW
FU, HS
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (05) : 193 - &
[6] EFFECTS OF DEEP IMPURITIES ON N+P JUNCTION REVERSE-BIASED SMALL-SIGNAL CAPACITANCE
SCHIBLI, E
MILNES, AG
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 323 - +
[7] PREPARATION OF CRYSTALLINE CUINSE2 BY DIRECTIONAL FREEZING
SHIH, I
SHAHIDI, AV
CHAMPNESS, CH
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) : 411 - 414
[8] CURRENT VOLTAGE CHARACTERISTIC OF CUINSE2 HOMOJUNCTIONS
SHIH, I
QIU, CX
[J]. ELECTRONICS LETTERS, 1985, 21 (08) : 350 - 351
[9] SOME CHARACTERISTICS OF IN-DIFFUSED CUINSE2 HOMOJUNCTIONS
SHIH, I
SHAHIDI, AV
CHAMPNESS, CH
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 421 - 423
[10] NEW METHOD FOR COMPLETE ELECTRICAL CHARACTERIZATION OF RECOMBINATION PROPERTIES OF TRAPS IN SEMICONDUCTORS
WANG, AC
SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4645 - 4656