NMR-STUDY ON HEAVILY DOPED SILICON .1.

被引：44

作者：

SASAKI, W ^{[1
]}

IKEHATA, S ^{[1
]}

KOBAYASHI, SI ^{[1
]}

机构：

[1] UNIV TOKYO, FAC SCI, DEPT PHYS, BUNKYO, TOKYO, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1974年 / 36卷 / 05期

关键词：

D O I：

10.1143/JPSJ.36.1377

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：1377 / 1382

页数：6

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