RECOIL IMPLANTATION OF ALUMINUM INTO NORMAL-SILICON

被引:3
作者
WONG, WC
LAM, YW
KWOK, HL
机构
[1] Chinese Univ of Hong Kong, Shatin, Hong Kong, Chinese Univ of Hong Kong, Shatin, Hong Kong
关键词
SEMICONDUCTOR DEVICES; SCHOTTKY BARRIER - Junctions - SEMICONDUCTOR DIODES - Junctions;
D O I
10.1007/BF01739275
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The purpose of of this work was to investigate the effects for aluminium recoil implanted into n-type silicon. In order to avoid complications caused by other more active atoms, argon was used as the primary ion. Surface sheet resistance measurements were used to study the electrical properties of the implanted layers as well as the degree of aluminium activation. I-V and C-V measurements were made to assess the characteristics of devices so formed. While reasonable Scottky diodes and shallow p-n junctions could be formed using recoil implantation, the inherent damage effects associated with this technique, especially at high implant dosages, would make the formation of high quality devices difficult.
引用
收藏
页码:531 / 534
页数:4
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