RECOIL IMPLANTATION OF AL INTO DISORDERED SILICON

被引：4

作者：

PAPROCKI, K

BRYLOWSKA, I

机构：

[1] M. Curie-Sklodowska Univ Lublin, Lublin, Pol, M. Curie-Sklodowska Univ Lublin, Lublin, Pol

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 94卷 / 01期

关键词：

D O I：

10.1002/pssa.2210940150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Depth profiles of the acceptor concentration in disordered silicon are studied after recoil implantation of Al. The silicon samples are disordered by multiple ion implantation of He ions in the energy range from 30 to 150 kev. Recoil implantation is carried out in the Al/Si(p) system using 100 kev Ar ions. The profiles are compared with those obtained by direct implantation.

引用

页码：391 / 394

页数：4

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