BEHAVIOR OF RECOILED OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SILICON

被引：5

作者：

IZUMI, T ^{[1
]}

MATSUMORI, T ^{[1
]}

HIRAO, T ^{[1
]}

YAEGASHI, Y ^{[1
]}

FUSE, G ^{[1
]}

INOUE, K ^{[1
]}

机构：

[1] MATSUSHITA ELECT IND CO LTD, CENT RES LABS, MORIGUCHI, OSAKA, JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

D O I：

10.1016/0167-5087(83)90869-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：695 / 700

页数：6

共 14 条

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[6] AMORPHOUS CLUSTERS ASSOCIATED WITH RECOIL OXYGEN CREATED IN AS+ ION-IMPLANTED SI-SIO2 SYSTEMS [J].

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[7] ELECTRON-SPIN-RESONANCE OF RESIDUAL DEFECTS IN SILICON FROM RECOIL IMPLANTATION OF OXYGEN IN SI-SIO2 SYSTEMS [J].

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[8] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI [J].

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[10] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI [J].

MAGEE, TJ ;

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