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INVESTIGATION OF EFFECT OF A MAGNETIC-FIELD ON FORWARD CHARACTERISTICS OF SOME SILICON DIODES AT LOW-TEMPERATURES
被引:8
作者
:
ALDRIDGE, RV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
ALDRIDGE, RV
[
1
]
DAVIS, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
DAVIS, K
[
1
]
HOLLOWAY, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
HOLLOWAY, M
[
1
]
机构
:
[1]
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NR4 6TJ,ENGLAND
来源
:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
1975年
/ 8卷
/ 01期
关键词
:
D O I
:
10.1088/0022-3727/8/1/014
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:64 / 68
页数:5
相关论文
共 16 条
[1]
BEHAVIOR OF FORWARD BIASED SILICON DIODES AT LOW-TEMPERATURES
ALDRIDGE, RV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NOR 88C,ENGLAND
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NOR 88C,ENGLAND
ALDRIDGE, RV
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 617
-
619
[2]
LOCALIZATION OF ELECTRONS IN IMPURE SEMICONDUCTORS BY A MAGNETIC FIELD
DURKAN, J
论文数:
0
引用数:
0
h-index:
0
DURKAN, J
ELLIOTT, RJ
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, RJ
MARCH, NH
论文数:
0
引用数:
0
h-index:
0
MARCH, NH
[J].
REVIEWS OF MODERN PHYSICS,
1968,
40
(04)
: 812
-
&
[3]
HEINRICH H, 1968, J APPL PHYS, V41, P296
[4]
EFFECT OF MAGNETIC-FIELD ON CURRENT FILAMENT IN GOLD-DOPED SILICON
HOMMA, K
论文数:
0
引用数:
0
h-index:
0
HOMMA, K
KOBAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, Y
FUKAMI, T
论文数:
0
引用数:
0
h-index:
0
FUKAMI, T
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(04)
: 154
-
+
[5]
JONSCHER AK, 1961, BRIT J APPL PHYS, V12, P363
[6]
OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS
KITCHEN, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Components Laboratory, United States Army Electronics Command, Fort Monmouth
KITCHEN, WJ
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(08)
: 248
-
&
[7]
Many A., 1965, SEMICONDUCTOR SURFAC
[8]
MELNGAILIS J, 1962, J APPL PHYS, V33, P1892
[9]
ELECTRICAL PROPERTIES OF GE MAGNETODIODES
MERINSKY, K
论文数:
0
引用数:
0
h-index:
0
MERINSKY, K
BETKO, J
论文数:
0
引用数:
0
h-index:
0
BETKO, J
MORVIC, M
论文数:
0
引用数:
0
h-index:
0
MORVIC, M
KORDOS, P
论文数:
0
引用数:
0
h-index:
0
KORDOS, P
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(01)
: 187
-
&
[10]
NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS
MULLER, MW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and the Computer Components Laboratory Washington University, St. Louis
MULLER, MW
GUCKEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and the Computer Components Laboratory Washington University, St. Louis
GUCKEL, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(08)
: 560
-
+
←
1
2
→
共 16 条
[1]
BEHAVIOR OF FORWARD BIASED SILICON DIODES AT LOW-TEMPERATURES
ALDRIDGE, RV
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NOR 88C,ENGLAND
UNIV E ANGLIA,SCH MATH & PHYS,NORWICH NOR 88C,ENGLAND
ALDRIDGE, RV
[J].
SOLID-STATE ELECTRONICS,
1974,
17
(06)
: 617
-
619
[2]
LOCALIZATION OF ELECTRONS IN IMPURE SEMICONDUCTORS BY A MAGNETIC FIELD
DURKAN, J
论文数:
0
引用数:
0
h-index:
0
DURKAN, J
ELLIOTT, RJ
论文数:
0
引用数:
0
h-index:
0
ELLIOTT, RJ
MARCH, NH
论文数:
0
引用数:
0
h-index:
0
MARCH, NH
[J].
REVIEWS OF MODERN PHYSICS,
1968,
40
(04)
: 812
-
&
[3]
HEINRICH H, 1968, J APPL PHYS, V41, P296
[4]
EFFECT OF MAGNETIC-FIELD ON CURRENT FILAMENT IN GOLD-DOPED SILICON
HOMMA, K
论文数:
0
引用数:
0
h-index:
0
HOMMA, K
KOBAYASHI, Y
论文数:
0
引用数:
0
h-index:
0
KOBAYASHI, Y
FUKAMI, T
论文数:
0
引用数:
0
h-index:
0
FUKAMI, T
[J].
APPLIED PHYSICS LETTERS,
1972,
21
(04)
: 154
-
+
[5]
JONSCHER AK, 1961, BRIT J APPL PHYS, V12, P363
[6]
OSCILLATORY MAGNETO-CURRENT IN FORWARD BIASED SEMICONDUCTOR JUNCTIONS
KITCHEN, WJ
论文数:
0
引用数:
0
h-index:
0
机构:
Electronic Components Laboratory, United States Army Electronics Command, Fort Monmouth
KITCHEN, WJ
[J].
APPLIED PHYSICS LETTERS,
1969,
14
(08)
: 248
-
&
[7]
Many A., 1965, SEMICONDUCTOR SURFAC
[8]
MELNGAILIS J, 1962, J APPL PHYS, V33, P1892
[9]
ELECTRICAL PROPERTIES OF GE MAGNETODIODES
MERINSKY, K
论文数:
0
引用数:
0
h-index:
0
MERINSKY, K
BETKO, J
论文数:
0
引用数:
0
h-index:
0
BETKO, J
MORVIC, M
论文数:
0
引用数:
0
h-index:
0
MORVIC, M
KORDOS, P
论文数:
0
引用数:
0
h-index:
0
KORDOS, P
[J].
SOLID-STATE ELECTRONICS,
1968,
11
(01)
: 187
-
&
[10]
NEGATIVE RESISTANCE AND FILAMENTARY CURRENTS IN AVALANCHING SILICON P+-I-N+ JUNCTIONS
MULLER, MW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and the Computer Components Laboratory Washington University, St. Louis
MULLER, MW
GUCKEL, H
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Electrical Engineering and the Computer Components Laboratory Washington University, St. Louis
GUCKEL, H
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1968,
ED15
(08)
: 560
-
+
←
1
2
→