TWO-DIMENSIONAL HOT-ELECTRON MODELS FOR SHORT-GATE-LENGTH GAAS-MESFETS

被引：79

作者：

SNOWDEN, CM ^{[1
]}

LORET, D ^{[1
]}

机构：

[1] STATE UNIV GHENT,IMEC,MICROELEKTR GRP 3-4,ELEKTROMAGNET ACUST LAB,B-9000 GHENT,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 02期

关键词：

D O I：

10.1109/T-ED.1987.22909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：212 / 223

页数：12

共 24 条

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