IMPACT IONIZATION COEFFICIENTS IN STRAINED INGAAS/INALAS MULTIQUANTUM WELLS

被引：1

作者：

GUTIERREZAITKEN, AL

BHATTACHARYA, PK

机构：

[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.353822

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured electron and hole impact ionization coefficients in biaxially strained InxGa1-xAs/InyAl1-yAs (0.44 < x < 0.62, 0.44 < y < 0.62) multiquantum wells for the first time. It is seen that beta/alpha is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strain in the barrier. The results have been interpreted by considering band-to-band impact ionization and band-edge discontinuity impact ionization processes.

引用

页码：5014 / 5016

页数：3

共 18 条

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