LOW RESISTIVE P-TYPE ZNSE - A KEY FOR AN EFFICIENT BLUE ELECTROLUMINESCENT DEVICE

被引：12

作者：

STUCHELI, N

BUCHER, E

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / 109

页数：5

共 11 条

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[7] MOLECULAR-BEAM EPITAXIAL-GROWTH OF NITROGEN-DOPED ZNSE WITH ION DOPING TECHNIQUE [J].

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[10] METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (01) :57-59

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