ELECTRONIC EFFECTS ON DISLOCATION VELOCITIES IN HEAVILY DOPED SILICON

被引：120

作者：

PATEL, JR ^{[1
]}

TESTARDI, LR ^{[1
]}

FREELAND, PE ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1976年 / 13卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.13.3548

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3548 / 3557

页数：10

共 15 条

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[7] KINK FORMATION IN CHARGED DISLOCATION
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[8] HAASEN P, 1970, NBS317 SPEC PUBL, V2, P1231
[9] ELECTRONIC STATES AT DISLOCATIONS IN GERMANIUM
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SCHETTLER, R
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 9 (02): : 455 - +
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