CHARGED-PARTICLE ACTIVATION-ANALYSIS - STUDIES ON CARBON, NITROGEN AND OXYGEN MAINLY IN SEMICONDUCTOR SILICON

被引：8

作者：

NOZAKI, T

YATSURUGI, Y

ENDO, Y

机构：

[1] INST PHYS & CHEM RES,WAKO,SAITAMA,JAPAN

[2] KOMATSU ELECTR MET CO,SHINOMIYA,HIRATSUKA,JAPAN

来源：

JOURNAL OF RADIOANALYTICAL CHEMISTRY | 1976年 / 32卷 / 01期

关键词：

D O I：

10.1007/BF02517739

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：43 / 50

页数：8

共 10 条

[1] LOWERING OF BREAKDOWN VOLTAGE OF SEMICONDUCTOR SILICON DUE TO PRECIPITATION OF IMPURITY CARBON
AKIYAMA, N
YATSURUGI, Y
ENDO, Y
IMAYOSHI, Z
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (12) : 630 - 631
[2] ENDO Y, 1972, ANAL CHEM, V44, P2228
[3] KUBASCHEWSKI O, 1967, METALLURGICAL THERMO, P226
[4] CONCENTRATION AND BEHAVIOR OF CARBON IN SEMICONDUCTOR SILICON
NOZAKI, T
YATSURUGI, Y
AKIYAMA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) : 1566 - +
[5] CHARGED PARTICLE ACTIVATION ANALYSIS FOR CARBON, NITROGEN AND OXYGEN IN SEMICONDUCTOR SILCON
NOZAKI, T
YATSURUG.Y
AKIYAMA, N
[J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1970, 4 (01): : 87 - &
[6] BEHAVIOR OF LIGHT IMPURITY ELEMENTS IN PRODUCTION OF SEMICONDUCTOR SILICON
NOZAKI, T
YATSURUG.Y
AKIYAMA, N
ENDO, Y
MAKIDE, Y
[J]. JOURNAL OF RADIOANALYTICAL CHEMISTRY, 1974, 19 (01): : 109 - 128
[7] NEW RADIO-TRACER TECHNIQUE FOR EVAPORATION STUDY OF LIGHT ELEMENTS FROM MOLTEN SILICON
NOZAKI, T
MAKIDE, Y
YATSURUGI, Y
AKIYAMA, N
ENDO, Y
[J]. INTERNATIONAL JOURNAL OF APPLIED RADIATION AND ISOTOPES, 1971, 22 (10): : 607 - +
[8] NOZAKI T, 1972, B CHEM SOC JAPAN, V45, P2776
[9] STULL DR, 1965, JANAF THERMOCHEMCAL
[10] CONCENTRATION, SOLUBILITY, AND EQUILIBRIUM DISTRIBUTION COEFFICIENT OF NITROGEN AND OXYGEN IN SEMICONDUCTOR SILICON
YATSURUGI, Y
AKIYAMA, N
ENDO, Y
NOZAKI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 975 - 979