PROPERTIES OF AU OXIDE INP METAL-INTERFACIAL LAYER-SEMICONDUCTOR JUNCTIONS

被引：5

作者：

EBERSPACHER, C

FAHRENBRUCH, AL

BUBE, RH

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[2] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 05期

关键词：

D O I：

10.1063/1.335991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1876 / 1885

页数：10

相关论文

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