SPATIALLY-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF LATERAL P-N-JUNCTIONS PREPARED BY SI-DOPED GAAS USING A PHOTON SCANNING TUNNELING MICROSCOPE

被引:34
作者
SAIKI, T
MONONOBE, S
OHTSU, M
SAITO, N
KUSANO, J
机构
[1] TOKYO INST TECHNOL,INTERDISCIPLINARY GRAD SCH SCI & ENGN,MIDORI KU,YOKOHAMA,KANAGAWA 226,JAPAN
[2] NHK JAPAN BROADCASTING CORP,SCI & TECH RES LABS,SETAGAYA KU,TOKYO 157,JAPAN
关键词
D O I
10.1063/1.115099
中图分类号
O59 [应用物理学];
学科分类号
摘要
An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion. (C) 1995 American Institute of Physics.
引用
收藏
页码:2191 / 2193
页数:3
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