ELECTRON-BEAM PATTERNING OF EPITAXIAL CAF2 AND CA0.5SR0.5F2/(100)GAAS

被引：11

作者：

HIROSE, Y ^{[1
]}

HORNG, S ^{[1
]}

KAHN, A ^{[1
]}

WRENN, C ^{[1
]}

PFEFFER, R ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.577886

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electron beam patterning of crystalline CaF2 and Ca0.5Sr0.5F2 thin films grown by molecular-beam epitaxy is demonstrated. The mechanism leading to patterning is the removal of fluorine through high energy electron beam exposure and dissolution of the resulting metal oxide in a water-based solution. A scanning Auger microprobe and a scanning electron microscope are used as exposing tools. The development of the films is performed either in deionized water or in a weak HCl solution. The chemical analysis of the patterned features confirms the development of small windows. The feasibility of the fabrication of micrometers features is verified.

引用

页码：960 / 964

页数：5

共 10 条

[1] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM [J].