ENHANCED TAIL DIFFUSION OF PHOSPHORUS AND BORON IN SILICON - SELF-INTERSTITIAL PHENOMENA

被引：96

作者：

MOREHEAD, FF ^{[1
]}

LEVER, RF ^{[1
]}

机构：

[1] IBM CORP,GTD DIV,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：151 / 153

页数：3

共 23 条

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APPLIED PHYSICS LETTERS, 1985, 46 (08) :784-786

[4] SUPERSATURATION OF SELF-INTERSTITIALS AND UNDERSATURATION OF VACANCIES DURING PHOSPHORUS DIFFUSION IN SILICON [J].

FAHEY, P ;

DUTTON, RW ;

HU, SM .

APPLIED PHYSICS LETTERS, 1984, 44 (08) :777-779

[5] QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].

FAIR, RB ;

TSAI, JCC .

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[7]

GAISEANU F, 1984, EXTENDED ABSTRACTS E, P715

[8] DIFFUSION OF GOLD IN SILICON - A NEW MODEL [J].

GOSELE, U ;

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FRANK, W ;

SEEGER, A .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :157-159

[9] SILICON SELF-INTERSTITIAL SUPERSATURATION DURING PHOSPHORUS DIFFUSION [J].

HARRIS, RM ;

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APPLIED PHYSICS LETTERS, 1983, 43 (10) :937-939

[10]

HO CP, 1983, SEL83001 TECH REP

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