DEUTERIUM DIFFUSION INTO PLASMA-DEPOSITED SILICON OXYNITRIDE FILMS

被引:5
作者
ARNOLDBIK, WM
MAREE, CHM
HABRAKEN, FHPM
机构
[1] Department of Atomic and Interface Physics, Debye Institute, University of Utrecht, 3508 TA Utrecht
关键词
D O I
10.1016/0169-4332(94)90105-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Plasma-deposited silicon oxynitride films have been annealed in the temperature range 800-1000-degrees-C in a D2/N2 gas mixture in order to study the H-D exchange reaction in the surface region of these materials and the diffusion rate of hydrogen in these materials. The hydrogen and deuterium depth profiles and the H and D bonding configurations were examined using Elastic Recoil Detection and Fourier Transform Infrared Absorption Spectroscopy. In the as-deposited materials the diffusion of hydrogen appeared to be very fast. This allowed a separate study of the hydrogen-deuterium exchange reaction. We deduced the activation energy for the reaction of nitrogen-bonded hydrogen in the material with D2-bonded deuterium from the gas phase to be 1.5 eV. in the pre-annealed oxynitrides the diffusion rate appeared to be decreased down to values of 10(-12) to 10(-13) cm2/s in the range 900-1000-degrees-C. Both the exchange rate and the diffusion coefficient increase with the O/(O + N) concentration ratio for O/(O + N) > 0.3.
引用
收藏
页码:103 / 113
页数:11
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