ELECTRICAL-RESISTANCE OF ELECTRON-BEAM-INDUCED DEPOSITS FROM TUNGSTEN HEXACARBONYL

被引:36
作者
HOYLE, PC [1 ]
OGASAWARA, M [1 ]
CLEAVER, JRA [1 ]
AHMED, H [1 ]
机构
[1] TOSHIBA CO LTD,ULSI RES CTR,SAWAI KU,KAWASAKI 210,JAPAN
关键词
D O I
10.1063/1.109133
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied the change in electrical conductivity of deposits from focused electron beam induced dissociation of W(CO)6 for different exposure conditions. Lines were deposited by scanning repeatedly to build up the same total electron dose; with different electron doses per scan, resistance differences of more than one order of magnitude resulted. The lines with lower deposited thicknesses also have lower resistances, and so cannot be explained in terms of constant resistivity and different cross-sectional areas. A theoretical description involving an intermediate and a final product is proposed and compared to the experimental results.
引用
收藏
页码:3043 / 3045
页数:3
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