APPLICATION OF DEEP LEVEL TRANSIENT SPECTROSCOPY TO METAL-OXIDE-SEMICONDUCTOR RELAXATION TRANSIENTS

被引：35

作者：

PEARCE, NO

HAMILTON, B

PEAKER, AR

CRAVEN, RA

机构：

[1] UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECT ENGN & ELECTR, MANCHESTER M60 1QD, LANCS, ENGLAND

[2] MONSANTO ELECTR MAT, ST LOUIS, MO 63167 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339785

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：576 / 581

页数：6

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