LIQUID-PHASE ELECTROEPITAXY OF SEMICONDUCTOR COMPOUNDS

被引：38

作者：

BRYSKIEWICZ, T ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1986年 / 12卷 / 1-4期

关键词：

D O I：

10.1016/0146-3535(86)90005-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：29 / 43

页数：15

共 69 条

[1] CURRENT CONTROLLED LIQUID-PHASE EPITAXIAL (CCLPE) GROWTH OF INGAAS ON (100) INP [J].

ABULFADL, A ;

STEFANAKOS, EK ;

COLLIS, WJ .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (03) :559-573

[2] CURRENT CONTROLLED LPE GROWTH OF INXGA1-XAS ON GAAS [J].

ABULFADL, A ;

STEFANAKOS, EK ;

COLLIS, WJ .

JOURNAL OF CRYSTAL GROWTH, 1981, 51 (02) :279-282

[3] CHARACTERIZATION OF GAAS-LAYERS GROWN ON POLYCRYSTALLINE GAAS BY LPE AND CURRENT CONTROLLED LPE [J].

ABULFADL, A ;

STEFANAKOS, E ;

NANCE, W ;

COLLIS, W ;

MCPHERSON, J .

JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) :621-638

[4] PELTIER COOLING AT A IN-INP INTERFACE [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4627-4628

[5] CURRENT CONTROLLED LPE GROWTH OF INP [J].

ABULFADL, A ;

STEFANAKOS, EK .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (02) :341-345

[6]

Barchuk A. N., 1982, Soviet Physics - Technical Physics, V27, P1153

[7]

Barchuk A. N., 1979, Soviet Physics - Technical Physics, V24, P368

[8]

Biryulin Yu. F., 1983, Soviet Technical Physics Letters, V9, P68

[9]

BOUCHER CF, UNPUB J APPL PHYS

[10] PELTIER-INDUCED GROWTH KINETICS OF LIQUID-PHASE EPITAXIAL GAAS [J].

BRYSKIEWICZ, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 43 (05) :567-571

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