TUNNELING SPECTROSCOPY OF ELECTRON SPACE-CHARGE LAYERS ON (111)-SI

被引:12
作者
KUNZE, U
LAUTZ, G
机构
关键词
D O I
10.1016/0038-1098(82)91022-5
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:27 / 30
页数:4
相关论文
共 11 条
[1]   DENSITY-FUNCTIONAL CALCULATION OF SUB-BAND STRUCTURE IN ACCUMULATION AND INVERSION LAYERS [J].
ANDO, T .
PHYSICAL REVIEW B, 1976, 13 (08) :3468-3477
[2]  
Cheng Y., 1977, PROG SURF SCI, V8, P181
[3]   SUBSTRATE BIAS EFFECTS ON ELECTRON-MOBILITY IN SILICON INVERSION LAYERS AT LOW-TEMPERATURES [J].
FOWLER, AB .
PHYSICAL REVIEW LETTERS, 1975, 34 (01) :15-17
[4]   DETERMINATION OF SI-METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE TECHNIQUE [J].
KAR, S .
SOLID-STATE ELECTRONICS, 1975, 18 (02) :169-181
[5]   EFFECT OF A PARALLEL MAGNETIC FIELD ON SURFACE QUANTIZATION [J].
TSUI, DC .
SOLID STATE COMMUNICATIONS, 1971, 9 (20) :1789-&
[6]   PHONON-INDUCED STRUCTURES IN TUNNELING CHARACTERISTICS OF TYPE SI-OXIDE-METAL JUNCTIONS [J].
TSUI, DC ;
DUNKLEBERGER, LN .
APPLIED PHYSICS LETTERS, 1971, 18 (05) :200-+
[7]   ELECTRON-TUNNELING STUDIES OF A QUANTIZED SURFACE ACCUMULATION LAYER [J].
TSUI, DC .
PHYSICAL REVIEW B, 1971, 4 (12) :4438-&
[8]   TUNNELING STUDY OF SURFACE QUANTIZATION IN N-PBTE [J].
TSUI, DC ;
KAMINSKY, G ;
SCHMIDT, PH .
PHYSICAL REVIEW B, 1974, 9 (08) :3524-3531
[9]   ELECTRON TUNNELING AND CAPACITANCE STUDIES OF A QUANTIZED SURFACE ACCUMULATION LAYER [J].
TSUI, DC .
PHYSICAL REVIEW B, 1973, 8 (06) :2657-2669