NICKEL-ENHANCED SOLID-PHASE EPITAXIAL REGROWTH OF AMORPHOUS-SILICON

被引：15

作者：

MOHADJERI, B ^{[1
]}

LINNROS, J ^{[1
]}

SVENSSON, BG ^{[1
]}

OSTLING, M ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, POB 1298, S-16428 KISTA, SWEDEN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.68.1872

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Low-temperature solid-phase epitaxial regrowth of amorphous silicon (a-Si) is reported for an ion-amorphized Ni/Si structure. The epitaxial regrowth follows after monosilicide formation upon heating to only 425-degrees-C, as evidenced by Rutherford backscattering and channeling measurements and transmission electron microscopy. The regrowth rate of the a-Si layer (thickness approximately 600 angstrom) is enhanced by more than a factor of 300 compared with ordinary solid-phase epitaxy of ion-implanted a-Si. This is attributed to results from redistribution of Ni towards the a-Si/c-Si interface, as shown by secondary ion mass spectrometry, where the presence of Ni, or Ni-silicide nuclei, enhances the solid-phase epitaxy.

引用

页码：1872 / 1875

页数：4

共 14 条

[1] SILICIDE PRECIPITATION AND SILICON CRYSTALLIZATION IN NICKEL IMPLANTED AMORPHOUS-SILICON THIN-FILMS [J].