PHOTOLUMINESCENCE OF MBE-GROWN INAS1-XSBX LATTICE MATCHED TO GASB

被引：27

作者：

ELIES, S ^{[1
]}

KRIER, A ^{[1
]}

CLEVERLEY, IR ^{[1
]}

SINGER, K ^{[1
]}

机构：

[1] UMIST,DEPT ELECT ENGN & ELECTRON,MANCHESTER M60 1QD,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1993年 / 26卷 / 01期

关键词：

D O I：

10.1088/0022-3727/26/1/026

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice-matched InAsSb has been grown by molecular beam epitaxy onto GaSb. The epitaxial material was investigated using double crystal x-ray diffraction and photoluminescence spectroscopy. Photoluminescence emission was detected at room temperature near 4.2 pm which is of interest for the fabrication of long wavelength light sources suitable for infrared gas detection. The temperature dependent characteristics of the photoluminescence were also investigated.

引用

页码：159 / 162

页数：4

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