PREPARATION OF HIGH-QUALITY N-HG0.8CD0.2TE EPITAXIAL LAYER AND ITS APPLICATION TO INFRARED DETECTOR (LAMBDA=8-14 MU-M)

被引：5

作者：

NAGAHAMA, K

OHKATA, R

MUROTANI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 12期

关键词：

D O I：

10.1143/JJAP.21.L764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L764 / L766

页数：3

共 8 条

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[7] LATTICE-DEFECTS IN SEMICONDUCTING HG1-XCDXTE ALLOYS .2. DEFECT STRUCTURE OF INDIUM-DOPED HG0.8CD0.2TE [J].

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[8] LIQUID-PHASE GROWTH OF HGCDTE EPITAXIAL LAYERS [J].

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