EPITAXIAL REGROWTH OF SI IMPLANTED (100) AND (211) GAAS

被引：7

作者：

BHATTACHARYA, RS ^{[1
]}

RAI, AK ^{[1
]}

LING, SC ^{[1
]}

PRONKO, PP ^{[1
]}

机构：

[1] WRIGHT STATE UNIV,DAYTON,OH 45435

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 76卷 / 01期

关键词：

D O I：

10.1002/pssa.2210760115

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：131 / 136

页数：6

共 10 条

[1] DAMAGE ANNEALING BEHAVIOR OF SE IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

RAI, AK ;

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NARAYAN, J ;

LING, SC ;

WILSON, SR .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1983, 44 (01) :61-69

[2] DOSE DEPENDENCE OF EPITAXIAL REGROWTH OF SE-IMPLANTED GAAS [J].

BHATTACHARYA, RS ;

PRONKO, PP ;

LING, SC ;

WILSON, SR .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :502-504

[3]

BHATTACHARYA RS, 1982, J APPL PHYS, V53, P1803

[4] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

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MAYER, JW ;

SIGMON, TW .

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[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J].

DROSD, R ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :397-403

[6] REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

GAMO, K ;

INADA, T ;

MAYER, JW ;

EISEN, FH ;

RHODES, CG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :85-89

[7] ION-IMPLANTATION AND LOW-TEMPERATURE EPITAXIAL REGROWTH OF GAAS [J].

GRIMALDI, MG ;

PAINE, BM ;

NICOLET, MA ;

SADANA, DK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) :4038-4046

[8] ELECTRON MICROSCOPY AND DIFFRACTION OF TWINNED STRUCTURES IN EVAPORATED FILMS OF GOLD [J].

PASHLEY, DW ;

STOWELL, MJ .

PHILOSOPHICAL MAGAZINE, 1963, 8 (94) :1605-&

[9]

PICRAUX ST, 1981, DEFECTS SEMICONDUCTO, V2, P135

[10] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

REVESZ, P ;

WITTMER, M ;

ROTH, J ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

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