HIGH-RESOLUTION PATTERNING WITH AG2S/AS2S3 INORGANIC ELECTRON-BEAM RESIST AND REACTIVE ION ETCHING

被引：9

作者：

SINGH, B ^{[1
]}

BEAUMONT, SP ^{[1
]}

WEBB, A ^{[1
]}

BOWER, PG ^{[1
]}

WILKINSON, CDW ^{[1
]}

机构：

[1] UNIV GLASGOW,DEPT ELECTR & ELECT ENGN,GLASGOW G12 8QQ,SCOTLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 04期

关键词：

D O I：

10.1116/1.582755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1174 / 1177

页数：4

共 9 条

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[3] SUB-50-NM LITHOGRAPHY IN AMORPHOUS SE-GE INORGANIC RESIST BY ELECTRON-BEAM EXPOSURE [J].

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[4]

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[5]

SINGH B, 1982, 161ST M EL SOC MONTR

[6] SUB-MICRON OPTICAL LITHOGRAPHY USING AN INORGANIC RESIST-POLYMER BILEVEL SCHEME [J].

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[7]

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[8] NEW INORGANIC ELECTRON RESIST OF HIGH CONTRAST [J].

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[9] DRY DEVELOPMENT OF SE-GE INORGANIC PHOTORESIST [J].

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