SUB-50-NM LITHOGRAPHY IN AMORPHOUS SE-GE INORGANIC RESIST BY ELECTRON-BEAM EXPOSURE

被引:27
作者
SINGH, B
BEAUMONT, SP
BOWER, PG
WILKINSON, CDW
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D O I
10.1063/1.93347
中图分类号
O59 [应用物理学];
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页码:1002 / 1004
页数:3
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共 8 条
[1]  
BEAUMONT SP, 1981, APPL PHYS LETT, V38, P36
[2]   ELECTRON-DIFFRACTION STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS-FILMS [J].
CHEN, CH ;
TAI, KL .
APPLIED PHYSICS LETTERS, 1980, 37 (07) :605-607
[3]   WHISKER GROWTH INDUCED BY AG PHOTODOPING IN GLASSY GEXSE1-X FILMS [J].
CHEN, CH ;
TAI, KL .
APPLIED PHYSICS LETTERS, 1980, 37 (12) :1075-1077
[4]   ELECTROCHEMICAL ADSORPTION OF METALS ON AMORPHOUS SE-GE FILMS [J].
SINGH, B ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :428-433
[5]  
TAI KL, 1979, SPR M EL SOC BOST, P244
[6]   ANGSTROMS RESOLUTION IN SE-GE INORGANIC PHOTORESISTS [J].
YOSHIKAWA, A ;
HIROTA, S ;
OCHI, O ;
TAKEDA, A ;
MIZUSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) :L81-L83
[7]   NEW INORGANIC ELECTRON RESIST OF HIGH CONTRAST [J].
YOSHIKAWA, A ;
OCHI, O ;
NAGAI, H ;
MIZUSHIMA, Y .
APPLIED PHYSICS LETTERS, 1977, 31 (03) :161-163
[8]   DRY DEVELOPMENT OF SE-GE INORGANIC PHOTORESIST [J].
YOSHIKAWA, A ;
OCHI, O ;
MIZUSHIMA, Y .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :107-109