EFFECTS OF OXYGEN AND PRESSURE ON DIAMOND SYNTHESIS IN A MAGNETOACTIVE MICROWAVE-DISCHARGE

被引：15

作者：

CHANG, JJ ^{[1
]}

MANTEI, TD ^{[1
]}

VUPPULADHADIUM, R ^{[1
]}

JACKSON, HE ^{[1
]}

机构：

[1] UNIV CINCINNATI, DEPT PHYS, CINCINNATI, OH 45221 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.351024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of oxygen addition and total pressure on the synthesis of diamond have been studied in a magnetically enhanced microwave discharge. Diamond films were deposited on silicon substrates at substrate temperatures from 540 to 650-degrees-C and total pressures from 2 to 20 Torr, and were characterized by microprobe and macrochamber Raman spectroscopy and scanning electron microscopy. Without oxygen, Raman spectra of these films display only graphitic peaks. As oxygen is added, faceted crystalline diamond is observed in scanning electron microscope micrographs and a sharp diamond peak in the Raman spectrum appears. With 2% oxygen, diamond films exhibiting a pure diamond Raman peak at approximately 1334 cm-1 with very small nondiamond carbon peaks were grown at relatively low temperature (approximately 600-degrees-C) and low pressure (5-10 Torr).

引用

页码：2918 / 2923

页数：6

共 21 条

[1] RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].

AKATSUKA, F ;

HIROSE, Y ;

KOMAKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09) :L1600-L1602

[2]

BROWN SC, 1959, BASIC DATA PLASMA PH, P5

[3] THE KINETICS OF THE REACTION OF CARBON WITH HYDROGEN CONTAINING 0.1-PERCENT OXYGEN [J].

CAO, JR ;

BACK, MH .

CARBON, 1985, 23 (02) :141-145

[4] DIAMOND CRYSTAL-GROWTH BY PLASMA CHEMICAL VAPOR-DEPOSITION [J].

CHANG, CP ;

FLAMM, DL ;

IBBOTSON, DE ;

MUCHA, JA .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1744-1748

[5] LOW-TEMPERATURE AND LOW-PRESSURE DIAMOND SYNTHESIS IN A MICROWAVE ELECTRON-CYCLOTRON RESONANCE DISCHARGE [J].

CHANG, JJ ;

MANTEI, TD ;

VUPPULADHADIUM, R ;

JACKSON, HE .

APPLIED PHYSICS LETTERS, 1991, 59 (10) :1170-1172

[6]

CHANG JJ, THESIS U CINCINNATI

[7] TEMPERATURE AND REACTIVE ETCHING EFFECTS ON THE MICROSTRUCTURE OF MICROWAVE PLASMA DEPOSITED DIAMOND FILMS [J].

HARKER, AB ;

DENATALE, JF .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (04) :818-823

[8] LARGE AREA CHEMICAL VAPOR-DEPOSITION OF DIAMOND PARTICLES AND FILMS USING MAGNETOMICROWAVE PLASMA [J].

KAWARADA, H ;

MAR, KS ;

HIRAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (06) :L1032-L1034

[9] THE EFFECT OF MAGNETIC FIELD ON THE BREAKDOWN OF GASES AT MICROWAVE FREQUENCIES [J].

LAX, B ;

ALLIS, WP ;

BROWN, SC .

JOURNAL OF APPLIED PHYSICS, 1950, 21 (12) :1297-1304

[10] LOW-TEMPERATURE DIAMOND DEPOSITION BY MICROWAVE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

LIOU, Y ;

INSPEKTOR, A ;

WEIMER, R ;

MESSIER, R .

APPLIED PHYSICS LETTERS, 1989, 55 (07) :631-633

← 1 2 3 →