LOW-TEMPERATURE AND LOW-PRESSURE DIAMOND SYNTHESIS IN A MICROWAVE ELECTRON-CYCLOTRON RESONANCE DISCHARGE

被引：22

作者：

CHANG, JJ ^{[1
]}

MANTEI, TD ^{[1
]}

VUPPULADHADIUM, R ^{[1
]}

JACKSON, HE ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 10期

关键词：

D O I：

10.1063/1.105546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High quality diamond films have been grown at low temperature (540-650-degrees-C) and low pressure (2-20 Torr) in a microwave electron cyclotron resonance CH4-O2-H2 discharge. The films were characterized by microprobe Raman spectroscopy and scanning electron microscopy. Diamond crystals grown at approximately 600-degrees-C and 10 Torr with 2% oxygen exhibit a characteristic Raman peak at 1334 cm-1 with no accompanying nondiamond carbon peaks.

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页码：1170 / 1172

页数：3

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