REDISTRIBUTION OF ARSENIC IN SILICON DURING HIGH-PRESSURE THERMAL-OXIDATION

被引：11

作者：

CHOI, SS ^{[1
]}

NUMAN, MZ ^{[1
]}

CHU, WK ^{[1
]}

SRIVASTAVA, JK ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 11期

关键词：

D O I：

10.1063/1.98067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：688 / 690

页数：3

共 12 条

[1] BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION [J].

COLBY, JW ;

KATZ, LE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :409-412

[2] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].

DEAL, BE ;

GROVE, AS ;

SNOW, EH ;

SAH, CT .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&

[3] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].

FAIR, RB ;

TSAI, JCC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696

[4]

FAIR RB, 1981, IMPURITY DOPING PROC, pCH7

[5] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[6] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J].

HO, CP ;

PLUMMER, JD ;

MEINDL, JD ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :665-671

[7] RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J].

IRENE, EA ;

DONG, DW ;

ZETO, RJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :396-399

[8]

KERN W, 1970, RCA REV, V31, P187

[9] HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN [J].

LIE, LN ;

RAZOUK, RR ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2828-2834

[10]

MULLER H, 1975, J ELECTROCHEM SOC, V122, P234

← 1 2 →