REDISTRIBUTION OF ARSENIC IN SILICON DURING HIGH-PRESSURE THERMAL-OXIDATION

被引:11
作者
CHOI, SS [1 ]
NUMAN, MZ [1 ]
CHU, WK [1 ]
SRIVASTAVA, JK [1 ]
IRENE, EA [1 ]
机构
[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514
关键词
D O I
10.1063/1.98067
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:688 / 690
页数:3
相关论文
共 12 条
[1]   BORON SEGREGATION AT SI-SIO2 INTERFACE AS A FUNCTION OF TEMPERATURE AND ORIENTATION [J].
COLBY, JW ;
KATZ, LE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (03) :409-412
[2]   OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE [J].
DEAL, BE ;
GROVE, AS ;
SNOW, EH ;
SAH, CT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :308-&
[3]   DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) :1689-1696
[4]  
FAIR RB, 1981, IMPURITY DOPING PROC, pCH7
[5]   REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].
GROVE, AS ;
SAH, CT ;
LEISTIKO, O .
JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&
[6]   THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J].
HO, CP ;
PLUMMER, JD ;
MEINDL, JD ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :665-671
[7]   RESIDUAL-STRESS, CHEMICAL ETCH RATE, REFRACTIVE-INDEX, AND DENSITY-MEASUREMENTS ON SIO2-FILMS PREPARED USING HIGH-PRESSURE OXYGEN [J].
IRENE, EA ;
DONG, DW ;
ZETO, RJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :396-399
[8]  
KERN W, 1970, RCA REV, V31, P187
[9]   HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN [J].
LIE, LN ;
RAZOUK, RR ;
DEAL, BE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2828-2834
[10]  
MULLER H, 1975, J ELECTROCHEM SOC, V122, P234