PROCESSING AND PERFORMANCE OF GOLD MCMS

被引：3

作者：

CLOUD, TA

HOUSTON, MR

KOHL, PA

BIDSTRUP, SA

机构：

[1] Department of Chemical Engineering, Georgia Institute of Technology, Atlanta

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1993年 / 16卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/33.257860

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of gold metallization in multichip modules (MCM's) has been investigated for the purpose of achieving simplified processing and high reliability. A process has been developed for producing multilayered, gold metallization thin film MCM (MCM-D) structures which reduces the number of processing steps compared to copper metallization. Multilayered gold-polymer and gold-SiO2 test devices have been fabricated to evaluate the electrical and mechanical properties of the structures. The adhesion of a variety of dielectrics has been achieved by blanket coverage of the noble metal with a single step adhesion layer. The processing, performance, adhesion layer, and cost of gold MCM-D structures on silicon substrates have been analyzed.

引用

页码：724 / 730

页数：7

共 13 条

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