CORE-ELECTRON AND VALENCE-ELECTRON SPECTRA OF CLEAN SI SURFACES BY ENERGY-LOSS SPECTROSCOPY

被引：25

作者：

KOMA, A ^{[1
]}

LUDEKE, R ^{[1
]}

机构：

[1] IBM CORP THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1976年 / 55卷 / 02期

关键词：

D O I：

10.1016/0039-6028(76)90276-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：735 / 740

页数：6

相关论文

共 35 条

[1] SI(100) SURFACE RECONSTRUCTION - SPECTROSCOPIC SELECTION OF A STRUCTURAL MODEL
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[5] APPELBAUM JA, TO BE PUBLISHED
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[7] CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS
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[9] PHOTOEMISSION DENSITIES OF INTRINSIC SURFACE STATES FOR SI, GE, AND GAAS
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[10] RELATIONSHIP BETWEEN ATOMIC STRUCTURE AND ELECTRONIC PROPERTIES OF (111) SURFACES OF SILICON
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