THEORETICAL-ANALYSIS OF TRAPPING AND RECOMBINATION OF PHOTOGENERATED CARRIERS IN AMORPHOUS-SILICON SOLAR-CELLS

被引：27

作者：

SAKATA, I

HAYASHI, Y

机构：

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 37卷 / 03期

关键词：

D O I：

10.1007/BF00617500

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：153 / 164

页数：12

共 40 条

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[27] OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS-SILICON FILMS PREPARED BY PHOTOCHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 678 - 679
[28] SAKATA I, 1985, IEEE T ED, V32, P55
[29] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
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[30] THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON SOLAR-CELLS - EFFECTS OF INTERFACE RECOMBINATION
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KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1155 - 1161

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