PHOTOEMISSION-STUDY OF THE SURFACE ELECTRONIC-STRUCTURE OF INSB(110)

被引:15
作者
HOCHST, H [1 ]
HERNANDEZCALDERON, I [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 08期
关键词
D O I
10.1103/PhysRevB.30.4528
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4528 / 4532
页数:5
相关论文
共 26 条
[11]   RELATION OF SCHOTTKY BARRIERS TO EMPTY SURFACE STATES ON 3-5 SEMICONDUCTORS [J].
EASTMAN, DE ;
FREEOUF, JL .
PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1624-1627
[12]   ELECTRONIC SURFACE PROPERTIES OF 3-5 SEMICONDUCTORS - EXCITONIC EFFECTS, BAND-BENDING EFFECTS, AND INTERACTIONS WITH AU AND O ADSORBATE LAYERS [J].
GUDAT, W ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :831-837
[13]  
HERNANDEZCALDER.I, UNPUB SURF SCI
[14]   NEW METHOD FOR THE ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION - A-SN(001) AND INSB(001) SURFACES [J].
HERNANDEZCALDERON, I ;
HOCHST, H .
PHYSICAL REVIEW B, 1983, 27 (08) :4961-4965
[15]   ANGLE-RESOLVED PHOTOEMISSION-STUDY OF THE ELECTRONIC-STRUCTURE OF CHEMISORBED HYDROGEN ON NI(111) [J].
HIMPSEL, FJ ;
KNAPP, JA ;
EASTMAN, DE .
PHYSICAL REVIEW B, 1979, 19 (06) :2872-2875
[16]   ANGULAR RESOLVED PHOTOEMISSION OF INSB(001) AND HETEROEPITAXIAL FILMS OF ALPHA-SN(001) [J].
HOCHST, H ;
HERNANDEZCALDERON, I .
SURFACE SCIENCE, 1983, 126 (1-3) :25-31
[17]  
HOCHST H, 1983, ANN ISRAEL PHYS SOC, V6, P333
[18]  
LARSEN PK, 1982, PHYS REV B, V26, pJ222
[19]   SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].
LUBINSKY, AR ;
DUKE, CB ;
LEE, BW ;
MARK, P .
PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061
[20]   STUDY OF THE PHASE-TRANSITION IN HETEROEPITAXIALLY GROWN FILMS OF ALPHA-SN BY RAMAN-SPECTROSCOPY [J].
MENENDEZ, J ;
HOCHST, H .
THIN SOLID FILMS, 1984, 111 (04) :375-379