EFFECTIVE MOBILITY OF ELECTRONS IN SURFACE-LAYER OF SEMIINSULATING AND P-TYPE INP SUBSTRATES

被引：9

作者：

TAKAGI, S

SUGANO, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339471

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2387 / 2391

页数：5

共 18 条

[1] MEASUREMENTS ON VELOCITY/FIELD CHARACTERISTIC OF INDIUM PHOSPHIDE [J].

BOERS, PM .

ELECTRONICS LETTERS, 1971, 7 (20) :625-+

[2] ELECTRON SUBBANDS ON INP [J].

CHENG, HC ;

KOCH, F .

PHYSICAL REVIEW B, 1982, 26 (04) :1989-1998

[3] INFLUENCE OF INTERFACIAL STRUCTURE ON THE ELECTRONIC-PROPERTIES OF SIO2/INP MISFETS [J].

GEIB, KM ;

GOODNICK, SM ;

LIN, DY ;

GANN, RG ;

WILMSEN, CW ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03) :516-521

[4] MICROWAVE MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF N-TYPE INP [J].

GLOVER, GH .

APPLIED PHYSICS LETTERS, 1972, 20 (06) :224-&

[5] ELECTRON-TRANSPORT IN INVERSION AND ACCUMULATION LAYERS OF III-V-COMPOUNDS [J].

GOODNICK, SM ;

FERRY, DK .

THIN SOLID FILMS, 1983, 103 (1-2) :27-46

[6] INVERSION-MODE INP MISFET USING A PHOTOCHEMICAL PHOSPHORUS NITRIDE GATE INSULATOR [J].

HIROTA, Y ;

HISAKI, T ;

MIKAMI, O .

ELECTRONICS LETTERS, 1985, 21 (16) :690-691

[7] INP MISFETS WITH PLASMA ANODIC AL2O3 AND INTERLAYED NATIVE OXIDE GATE INSULATORS [J].

MATSUI, M ;

HIRAYAMA, Y ;

ARAI, F ;

SUGANO, T .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :308-310

[8] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[9] TWO-DIMENSIONAL ELECTRON-TRANSPORT IN SEMICONDUCTOR LAYERS .1. PHONON-SCATTERING [J].

PRICE, PJ .

ANNALS OF PHYSICS, 1981, 133 (02) :217-239

[10] POLAR-OPTICAL-MODE SCATTERING FOR AN IDEAL QUANTUM-WELL HETEROSTRUCTURE [J].

PRICE, PJ .

PHYSICAL REVIEW B, 1984, 30 (04) :2234-2235

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