THE INFLUENCE OF ATOMIC MIXING ON SIMS DEPTH PROFILING OF THIN BURIED LAYERS

被引:5
作者
KING, BV
TSONG, IST
机构
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 218卷 / 1-3期
关键词
D O I
10.1016/0167-5087(83)91066-9
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:687 / 690
页数:4
相关论文
共 10 条
  • [1] DEPTH RESOLUTION OF SPUTTER PROFILING
    ANDERSEN, HH
    [J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
  • [2] A 1ST ORDER DIFFUSION-APPROXIMATION TO ATOMIC REDISTRIBUTION DURING ION-BOMBARDMENT OF SOLIDS, .2. FINITE-RANGE APPROXIMATION
    CARTER, G
    COLLINS, R
    THOMPSON, DA
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 55 (1-2): : 99 - 110
  • [3] PREFERRED SPUTTERING ON BINARY ALLOY SURFACES OF THE AL-PD-SISYSTEM
    HO, PS
    LEWIS, JE
    CHU, WK
    [J]. SURFACE SCIENCE, 1979, 85 (01) : 19 - 28
  • [4] DEPTH-PROFILING OF CU-NI SANDWICH SAMPLES BY SECONDARY ION MASS-SPECTROMETRY
    HOFER, WO
    LIEBL, H
    [J]. APPLIED PHYSICS, 1975, 8 (04): : 359 - 360
  • [5] INFLUENCE OF ATOMIC MIXING AND PREFERENTIAL SPUTTERING ON DEPTH PROFILES AND INTERFACES
    LIAU, ZL
    TSAUR, BY
    MAYER, JW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 121 - 127
  • [6] LITTMARK U, 1980, NUCL INSTRUM METHODS, V168, P239
  • [7] SECONDARY ION MASS-SPECTROMETRY AND ITS RELATION TO HIGH-ENERGY ION-BEAM ANALYSIS TECHNIQUES
    MAGEE, CW
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 191 (1-3): : 297 - 307
  • [8] DEPTH DEPENDENCE OF ATOMIC MIXING BY ION-BEAMS
    TSAUR, BY
    MATTESON, S
    CHAPMAN, G
    LIAU, ZL
    NICOLET, MA
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 825 - 828
  • [9] IMPLANTATION AND ION-BEAM MIXING IN THIN-FILM ANALYSIS
    WILLIAMS, P
    BAKER, JE
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 15 - 24
  • [10] Winterbon K.B., 1975, ION IMPLANTATION RAN, V2