PREPARATION OF SI THIN-FILMS BY SPONTANEOUS CHEMICAL-DEPOSITION

被引：12

作者：

HANNA, J ^{[1
]}

KAMO, A ^{[1
]}

KOMIYA, T ^{[1
]}

SHIMIZU, I ^{[1
]}

KOKADO, H ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,GRAD SCH NAGATSUTA,YOKOHAMA,KANAGAWA 227,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90103-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：172 / 174

页数：3

共 7 条

[1] REDUCED PHOTOINDUCED DEGRADATION IN CHEMICAL VAPOR-DEPOSITED HYDROGENATED AMORPHOUS-SILICON FILMS [J].

CHU, TL ;

CHU, SS ;

BYLANDER, EG ;

ANG, ST .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :807-809

[2]

Hanna J., 1987, Disordered semiconductors, P435

[3]

HANNA J, 1989, IN PRESS MAT RES SOC

[4]

MATSUDA A, 1987, MATER SCI REP, V2, P141

[5] PREPARATION AND PROPERTIES OF A-SI FILMS DEPOSITED AT A HIGH DEPOSITION RATE UNDER A MAGNETIC-FIELD [J].

OHNISHI, M ;

NISHIWAKI, H ;

UCHIHASHI, K ;

YOSHIDA, K ;

TANAKA, M ;

NINOMIYA, K ;

NISHIKUNI, M ;

NAKAMURA, N ;

TSUDA, S ;

NAKANO, S ;

YAZAKI, T ;

KUWANO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01) :40-46

[6] REACTION-MECHANISM AND KINETICS OF SILANE PYROLYSIS ON A HYDROGENATED AMORPHOUS-SILICON SURFACE [J].

ROBERTSON, R ;

GALLAGHER, A .

JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (06) :3623-3630

[7] MICROWAVE-EXCITED PLASMA CVD OF A-SI-H FILMS UTILIZING A HYDROGEN PLASMA STREAM OR BY DIRECT EXCITATION OF SILANE [J].

WATANABE, T ;

TANAKA, M ;

AZUMA, K ;

NAKATANI, M ;

SONOBE, T ;

SHIMADA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (08) :1215-1218

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