4-WAVE-MIXING REFLECTIVITY OF SILICON AT 1.06 MU-M - INFLUENCE OF FREE-CARRIER ABSORPTION

[1] DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3237 - 3242

[2] EICHLER HJ, 1978, ADV SOLID STATE PHYS, V18, P241

[3] Hopf F. A., 1982, SPRINGER SERIES CHEM, V23, P368

[4] DEGENERATE 4-WAVE MIXING IN SEMICONDUCTORS - APPLICATION TO PHASE CONJUGATION AND TO PICOSECOND-RESOLVED STUDIES OF TRANSIENT CARRIER DYNAMICS [J]. OPTICAL ENGINEERING, 1982, 21 (02) : 199 - 218

[5] HIGH-EFFICIENCY DEGENERATE 4-WAVE MIXING OF 1.06-MU-M RADIATION IN SILICON [J]. OPTICS LETTERS, 1979, 4 (10) : 328 - 330

[6] DEGENERATE 4-WAVE MIXING NEAR THE BAND-GAP OF SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 454 - 456

[7] JAIN RK, 1982, OPTICAL PHASE CONJUG

[8] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 793 - 800

[9] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (03) : 425 - 436

[10] Woerdman J. P., 1970, Optics Communications, V2, P212, DOI 10.1016/0030-4018(70)90140-9

[1] DIFFRACTION EFFICIENCY AND DECAY TIMES OF FREE-CARRIER GRATINGS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) : 3237 - 3242

[2] EICHLER HJ, 1978, ADV SOLID STATE PHYS, V18, P241

[3] Hopf F. A., 1982, SPRINGER SERIES CHEM, V23, P368

[4] DEGENERATE 4-WAVE MIXING IN SEMICONDUCTORS - APPLICATION TO PHASE CONJUGATION AND TO PICOSECOND-RESOLVED STUDIES OF TRANSIENT CARRIER DYNAMICS [J]. OPTICAL ENGINEERING, 1982, 21 (02) : 199 - 218

[5] HIGH-EFFICIENCY DEGENERATE 4-WAVE MIXING OF 1.06-MU-M RADIATION IN SILICON [J]. OPTICS LETTERS, 1979, 4 (10) : 328 - 330

[6] DEGENERATE 4-WAVE MIXING NEAR THE BAND-GAP OF SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 454 - 456

[7] JAIN RK, 1982, OPTICAL PHASE CONJUG

[8] INVESTIGATION OF NONEQUILIBRIUM PROCESSES IN SEMICONDUCTORS BY METHOD OF TRANSIENT HOLOGRAMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 793 - 800

[9] DETERMINATION OF THE INTERBAND AND THE FREE CARRIER ABSORPTION CONSTANTS IN SILICON AT HIGH-LEVEL PHOTOINJECTION [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (03) : 425 - 436

[10] Woerdman J. P., 1970, Optics Communications, V2, P212, DOI 10.1016/0030-4018(70)90140-9