HIGH CONDUCTIVITY POLYCRYSTALLINE SILICON OBTAINED BY MOLECULAR-BEAM DEPOSITION

被引：2

作者：

DELAGE, SL

JENG, SJ

JOUSSE, D

IYER, SS

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.99199

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：999 / 1001

页数：3

共 22 条

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