IMPROVEMENTS OF ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS BY SUBSTRATE BIAS APPLICATION DURING ELECTRON-CYCLOTRON-RESONANCE PLASMA-EXCITED MOLECULAR-BEAM EPITAXY

被引：13

作者：

KONDO, N

NANISHI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 24期

关键词：

D O I：

10.1063/1.101094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2419 / 2421

页数：3

共 9 条

[1]

KONDO N, 1988, AIP C P, V167, P320

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[3] PLASMA-ASSISTED EPITAXIAL-GROWTH OF GAAS AND GASB LAYERS IN HYDROGEN PLASMA [J].

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[4] HEAVILY TE-DOPED GAAS-LAYERS BY PLASMA-ASSISTED EPITAXY [J].

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[5]

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[7] PLASMA-ASSISTED LOW-TEMPERATURE EPITAXY [J].

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AINA, O .

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[8]

SHIMABUKURO H, 1988, 5TH P PLASM PROC RES, P98

[9] LOW-TEMPERATURE GAAS EPITAXIAL-GROWTH USING ELECTRON-CYCLOTRON RESONANCE METALORGANIC-MOLECULAR-BEAM EPITAXY [J].

TANAKA, Y ;

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SUEMUNE, I ;

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YAMANISHI, M .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) :2778-2780

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