PLASMA-ASSISTED LOW-TEMPERATURE EPITAXY

被引：8

作者：

PANDE, KP

AINA, O

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573830

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：673 / 676

页数：4

共 9 条

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[6] LOW-TEMPERATURE PLASMA-ENHANCED EPITAXY OF GAAS [J].

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