THE FABRICATION OF CMOS STRUCTURES WITH INCREASED IMMUNITY TO LATCHUP USING THE 2-STEP EPITAXIAL PROCESS

被引：4

作者：

JASTRZEBSKI, L

CORBOY, JF

SOYDAN, R

PAGLIARO, R

MAGEE, C

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 12期

关键词：

D O I：

10.1149/1.2113724

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：3057 / 3059

页数：3

共 15 条

[1]

Hall J. E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P292

[2] SELECTIVE EPITAXIAL-GROWTH FOR THE FABRICATION OF CMOS INTEGRATED-CIRCUITS [J].

IPRI, AC ;

JASTRZEBSKI, L ;

CORBOY, JF ;

METZL, R .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) :1741-1748

[3] SILICON ON INSULATORS - DIFFERENT APPROACHES - A REVIEW [J].

JASTRZEBSKI, L .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :253-270

[4] GROWTH OF ELECTRONIC QUALITY SILICON OVER SIO2 BY EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

JASTRZEBSKI, L ;

CORBOY, JF ;

PAGLIARO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) :2645-2647

[5]

JASTRZEBSKI L, 1983, RCA REV, V44, P250

[6] GROWTH-PROCESS OF SILICON OVER SIO2 BY CVD - EPITAXIAL LATERAL OVERGROWTH TECHNIQUE [J].

JASTRZEBSKI, L ;

CORBOY, JF ;

MCGINN, JT ;

PAGLIARO, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) :1571-1580

[7]

Jastrzebski L., 1983, 1983 Symposium on VLSI Technology. Digest of Technical Papers, P50

[8] SOI BY CVD - EPITAXIAL LATERAL OVERGROWTH (ELO) PROCESS - REVIEW [J].

JASTRZEBSKI, L .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :493-526

[9]

Kurach P., UNPUB

[10]

Rung R. D., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P574

← 1 2 →