DARK-CURRENT AND CAPACITANCE ANALYSIS OF INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：15

作者：

PHILIPPE, P

POULAIN, P

KAZMIERSKI, K

DECREMOUX, B

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.336447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1771 / 1773

页数：3

共 11 条

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[8]

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